v30200c, vf30200c, vb 30200c & vi30200c vishay general semiconductor document number: 89014 revision: 24-jun-09 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 new product dual high-voltage trench mos barrier schottky rectifier ultra low v f = 0.526 v at i f = 5 a features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? low thermal resistance ? meets msl level 1, per j-std-020, lf maximum peak of 245 c (for to-263ab package) ? solder bath temperature 275 c maximum, 10 s, per jesd 22-b106 (for to-220ab, ito-220ab and to-262aa package) ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in high frequency converters, switching power supplies, freewheeling diodes, or-ing diode, dc-to-dc converters and reverse battery protection. mechanical data case: to-220ab, ito-220 ab, to-263ab and to-262aa molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs comp liant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 2 x 15 a v rrm 200 v i fsm 250 a v f at i f = 15 a 0.648 v t j max. 150 c to-220ab 1 2 3 1 k 2 3 to-263ab 1 2 k to-262aa pin 1 pin 2 pin 3 k pin 1 pin 2 k heatsink pin 1 pin 2 pin 3 pin 1 pin 2 case pin 3 v30200c vf30200c vi30200c vb30200c tmbs ? ito-220ab 1 2 3 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol v30200c vf30200c vb30200c vi30200c unit maximum repetitive peak reverse voltage v rrm 200 v maximum average forward rectified current (fig. 1) per device per diode i f(av) 30 15 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 250 a non-repetitive avalanche energy at t j = 25 c, l = 60 mh per diode e as 200 mj peak repetitive reverse current at t p = 2 s, 1 khz, t j = 38 c 2 c per diode i rrm 0.5 a voltage rate of change (rated v r ) dv/dt 10 000 v/s isolation voltage (ito-220ab only) from termal to heatsink t = 1 min v ac 1500 v operating junction and storage temperature range t j , t stg - 40 to + 150 c
new product v30200c, vf30200c, vb30200c & vi30200c vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 89014 revision: 24-jun-09 2 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit breakdown voltage i r = 10 ma t j = 25 c v br 205 (minimum) - v instantaneous forward voltage per diode (1) i f = 5 a i f = 10 a i f = 15 a t j = 25 c v f 0.691 0.770 0.841 - - 1.10 v i f = 5 a i f = 10 a i f = 15 a t j = 125 c 0.526 0.594 0.648 - - 0.72 reverse current per diode (2) v r = 180 v t j = 25 c t j = 125 c i r 2.4 3.8 - - a ma v r = 200 v t j = 25 c t j = 125 c 5.3 6.0 160 12 a ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol v30200c vf30200c vb30200c vi30200c unit typical thermal resistance per diode r jc 2.0 5.5 2.0 2.0 c/w ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode to-220ab v30200c-e3/4w 2.248 4w 50/tube tube ito-220ab vf30200c-e3/4w 1.75 4w 50/tube tube to-263ab vb30200c-e3/4w 1.39 4w 50/tube tube to-263ab vb30200c-e3/8w 1.39 8w 800/reel tape and reel to-262aa vi30200c-e3/4w 1.46 4w 50/tube tube figure 1. forward derating curve 0 10 20 30 40 0 25 50 75 100 125 150 175 a v erage for w ard c u rrent (a) case temperat u re (c) resisti v e or ind u cti v e load v f30200c v (b,i)30200c figure 2. forward power loss characteristics per diode 0 2 4 6 8 10 12 14 04 8 6 212 10 16 1 8 14 a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 d = t p /t t p t
new product v30200c, vf30200c, vb 30200c & vi30200c vishay general semiconductor document number: 89014 revision: 24-jun-09 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 figure 3. typical instantaneous forw ard characteristics per diode figure 4. typical reverse characteristics per diode figure 5. typical junction capacitance per diode 0.1 10 100 0.2 0.4 0.6 0. 8 1.2 1.0 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t a = 150 c t a = 125 c t a = 25 c 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 8 0 90 100 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent (ma) t j = 150 c t j = 125 c t j = 25 c t j = 100 c 100 10 1000 10 000 0.1 1 10 100 re v erse v oltage ( v ) j u nction capaci tance (pf) figure 6. typical transient thermal impedance per diode figure 7. typical transient thermal impedance per diode t - p u lse d u ration (s) transient thermal impedance (c/ w ) 0.1 1 10 0.01 0.1 1 10 100 j u nction to case v (b,i)30200c 1 10 0.01 0.1 1 10 100 t - p u lse d u ration (s) transient thermal impedance (c/ w ) j u nction to case v f30200c
new product v30200c, vf30200c, vb30200c & vi30200c vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 89014 revision: 24-jun-09 4 package outline dimensions in inches (millimeters) to-220ab 0.113 (2. 8 7) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15. 8 7) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.02 8 (0.70) 0.154 (3.91) 0.14 8 (3.74) 1 3 2 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.6 8 ) 0.135 (3.43) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 1.14 8 (29.16) 1.11 8 (2 8 .40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) ito-220ab 0.076 (1.93) ref. 45 ref. pi n 3 2 1 0.404 (10.26) 0.3 8 4 (9.75) 0.076 (1.93) ref. 0.600 (15.24) 0.5 8 0 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.191 (4. 8 5) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0. 8 9) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.3 8 ) 0.105 (2.67) 0.095 (2.41) 0.02 8 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 0.135 (3.43) dia. 0.122 (3.0 8 ) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4. 8 3) 0.170 (4.32) 7 ref. 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) to-262aa heatsi n k pi n 2 pi n 1 pi n 3 0.401 (10.19) 0.3 8 1 (9.6 8 ) 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.35) k 123 0.055 (1.40) 0.047 (1.19) 0.510 (12.95) 0.470 (11.94) pi n 0.411 (10.45) max. 0.250 (6.35) mi n . 30 (typ.) (ref.) 0.035 (0.90) 0.02 8 (0.70) 0.205 (5.20) 0.195 (4.95) 0.104 (2.65) 0.096 (2.45) 0.057 (1.45) 0.045 (1.14) 0.160 (4.06) 0.140 (3.56) 0.950 (24.13) 0.920 (23.37) to-263ab mountin g pad layout 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.0 8 (2.032) mi n . 0.15 (3. 8 1) mi n . 0.33 ( 8 .3 8 ) mi n . 0.42 (10.66) mi n . 12 k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4. 8 3) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15. 8 5) 0.591 (15.00) 0.037 (0.940) 0.027 (0.6 8 6) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 ( 8 .13) 0.411 (10.45) 0.3 8 0 (9.65) 0.245 (6.22) mi n .
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